RU3089L

RU3089L N-Channel Advanced Power MOSFET MOSFET Features 30V/89A, RDS (ON) =3.8mΩ (Typ.)@VGS=10V RDS (ON) =5mΩ (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems Pin Description TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUL., 2012 Rating 30 ±20 175 -55 to 175 ① 89 ② 356 ① 89 ① 69 96 48 1.55 Unit V °C °C A A A W W °C/W 256 mJ www.ruichips.com RU3089L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3089L Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10...