Document
RU6881R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• Switching Application Systems • Inverter Systems
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
Rating
68 ±25 175 -55 to 175
①
86
②
344
①
86 61 120 60 1.25
Unit
V °C °C A
A A W W °C/W
225 mJ www.ruichips.com
RU6881R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU6881R Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
④
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 68V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V
VGS= 10V, IDS=40A
68 2
V 1
µA 30 34V ±100 nA 6.5 8 mΩ
Diode Characteristics
④
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time
td(OFF) Turn-off Delay Time tf Turn-off Fall Time
⑤
Gate Charge Characteristics
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
ISD=40A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz
VDD=30V, RL=1Ω, IDS=40A, VGEN= 10V, RG=8Ω
VDS=54V, VGS= 10V, IDS=40A
1.2 V 45 ns 90 nC
1.4 2750 340 190
12 16 30 52
Ω pF
ns
58 14 nC 18
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Pulse width limited by safe operating area. Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012
2
www.ruichips.com
Typical Characteristics
Power Dissipation
RU6881R
Drain Current
ID - Drain Current (A)
Ptot - Power (W)
Tj - Junction Temperature (°C) Safe Operation Area
Tj - Junction Temperature (°C) Thermal Transient Impedance
Normalized Effective Transient
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright© Ruichips Semico.