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RU6881R Dataheets PDF



Part Number RU6881R
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU6881R DatasheetRU6881R Datasheet (PDF)

RU6881R N-Channel Advanced Power MOSFET MOSFET Features • 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • Switching Application Systems • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maxi.

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RU6881R N-Channel Advanced Power MOSFET MOSFET Features • 68V/86A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • Switching Application Systems • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 Rating 68 ±25 175 -55 to 175 ① 86 ② 344 ① 86 61 120 60 1.25 Unit V °C °C A A A W W °C/W 225 mJ www.ruichips.com RU6881R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6881R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 68V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 68 2 V 1 µA 30 34V ±100 nA 6.5 8 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=1Ω, IDS=40A, VGEN= 10V, RG=8Ω VDS=54V, VGS= 10V, IDS=40A 1.2 V 45 ns 90 nC 1.4 2750 340 190 12 16 30 52 Ω pF ns 58 14 nC 18 Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Pulse width limited by safe operating area. Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 2 www.ruichips.com Typical Characteristics Power Dissipation RU6881R Drain Current ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (°C) Safe Operation Area Tj - Junction Temperature (°C) Thermal Transient Impedance Normalized Effective Transient ID - Drain Current (A) VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Copyright© Ruichips Semico.


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