RU75400Q

RU75400Q N-Channel Advanced Power MOSFET Features 75V/400A, RDS (ON) =1.5mΩ(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching Power Supply Pin Description G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 400 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 1480 400 283 600 300 0.25 50 A A W °C/W °C/W 1225 mJ Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RU75400Q Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75400Q Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=75V, VGS=0V IDSS Zero Gate Voltage Drain ...