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RU80100S Dataheets PDF



Part Number RU80100S
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU80100S DatasheetRU80100S Datasheet (PDF)

Features • 80V/100A, RDS (ON) =5.5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • High Current Switching Applications • Inverter Systems RU80100S N-Channel Advanced Power MOSFET Pin Description D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Vo.

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Features • 80V/100A, RDS (ON) =5.5mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available Applications • High Current Switching Applications • Inverter Systems RU80100S N-Channel Advanced Power MOSFET Pin Description D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 80 ±25 175 -55 to 175 100 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 400 A 100 A 71 188 W 94 0.8 °C/W 62.5 °C/W 225 mJ Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU80100S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80100S Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=80V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=125°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±25V, VDS=0V RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=40A Diode Characteristics 80 1 30 234 ±100 5.5 7.5 ④ VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 1.2 51 96 Dynamic Characteristics⑤ RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz VDD=30V, RL=0.8Ω, IDS=40A, VGEN=10V, RG=6Ω 1.6 3600 470 340 15 18 42 64 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=64V, VGS=10V, IDS=40A 78 15 27 Unit V µA V nA mΩ V ns nC Ω pF ns nC Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 75A. ③Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 2 www.ruichips.com RU80100S Ordering and Marking Information Device RU80100S Marking RU80100S Package Packaging Quantity Reel Size Tape width TO263 Tube 50 - - Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 3 www.ruichips.com RU80100S Typical Characteristics PD - Power (W) 200 180 160 140 120 100 80 60 40 20 0 0 Power Dissipation 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) RDS(ON) limited 100 10µs 10 100µs 1ms DC 10ms 1 0.1 TC=25°C 0.01 0.01 0.1 1 10 100 VDS - Drain-Source Voltage (V) RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) Drain Current 120 100 80 60 40 20 VGS=10V 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 175 Drain Current 20 IDS=40A 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 ZthJC - Thermal Response (°C/W) 0.1 0.01 0.001 1E-05 Single Pulse 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (sec) RθJC=0.8°C/W 1 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 4 www.ruichips.com RU80100S ID - Drain Current (A) Typical Characteristics Output Characteristics 150 VGS=8,9,10V 120 6V 90 5V 60 30 3V 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-Source Voltage (V) 2.5 Drain-Source On Resistance 2.5 VGS=10V IDS=40A 2.0 Normalized On Resistance 1.5 1.0 C - Capacitance (pF) 0.5 0.0 -50 TJ=25°C Rds(on)=5.5mΩ -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 175 Capacitance 5000 4500 4000 Frequency=1.0MHz 3500 3000 Ciss 2500 2000 1500 1000 Coss 500 Crss 0 1 10 VDS - Drain-Source Voltage (V) 100 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 5 VGS - Gate-Source Voltage (V) IS - Source Current (A) RDS(ON) - On Resistance (mΩ) Drain-Source On Resistance 20 15 10 10V 5 0 0 100 20 40 60 80 ID - Drain Current (A) 100 Source-Drain Diode Forward 10 TJ=175°C 1 TJ=25°C 0.1 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-Drain Voltage (V) 1.4 Gate Charge 10 9 VDS=64V 8 IDS=40A 7 6 5 4 3 2 1 0 0 20 40 60 80 QG - Gate Charge (nC) 100 www.ruichips.com Avalanche Test Circuit and Waveforms RU80100S Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A.


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