Document
Features
• 80V/100A, RDS (ON) =5.5mΩ (Typ.) @ VGS=10V
• Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available
Applications
• High Current Switching Applications • Inverter Systems
RU80100S
N-Channel Advanced Power MOSFET Pin Description
D
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
80 ±25 175 -55 to 175 100
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
400 A
100 A
71
188 W
94
0.8 °C/W
62.5 °C/W
225 mJ
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
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RU80100S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU80100S Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=80V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±25V, VDS=0V
RDS(ON)④ Drain-Source On-state Resistance VGS=10V, IDS=40A
Diode Characteristics
80 1 30
234 ±100
5.5 7.5
④
VSD trr
Qrr
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs
1.2 51 96
Dynamic Characteristics⑤
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charge Characteristics⑤
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=30V, Frequency=1.0MHz
VDD=30V, RL=0.8Ω, IDS=40A, VGEN=10V, RG=6Ω
1.6 3600 470 340
15 18 42 64
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=64V, VGS=10V, IDS=40A
78 15 27
Unit
V µA V nA mΩ V ns nC Ω pF
ns
nC
Notes:
①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A. ③Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
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RU80100S
Ordering and Marking Information
Device
RU80100S
Marking
RU80100S
Package Packaging Quantity Reel Size Tape width
TO263
Tube
50
-
-
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
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RU80100S
Typical Characteristics
PD - Power (W)
200 180 160 140 120 100
80 60 40 20
0 0
Power Dissipation
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
RDS(ON) limited
100
10µs 10 100µs
1ms DC 10ms 1
0.1
TC=25°C 0.01
0.01 0.1 1 10 100
VDS - Drain-Source Voltage (V)
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
Drain Current
120
100
80
60
40
20
VGS=10V 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Drain Current
20
IDS=40A
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-Source Voltage (V)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1
ZthJC - Thermal Response (°C/W)
0.1
0.01
0.001 1E-05
Single Pulse
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
RθJC=0.8°C/W
1
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
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RU80100S
ID - Drain Current (A)
Typical Characteristics
Output Characteristics
150
VGS=8,9,10V 120
6V
90
5V 60
30 3V
0 0.0
0.5 1.0 1.5 2.0
VDS - Drain-Source Voltage (V)
2.5
Drain-Source On Resistance
2.5
VGS=10V IDS=40A 2.0
Normalized On Resistance
1.5
1.0
C - Capacitance (pF)
0.5
0.0 -50
TJ=25°C Rds(on)=5.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
5000
4500 4000
Frequency=1.0MHz
3500 3000
Ciss
2500
2000
1500
1000
Coss
500 Crss
0 1
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013
5
VGS - Gate-Source Voltage (V)
IS - Source Current (A)
RDS(ON) - On Resistance (mΩ)
Drain-Source On Resistance
20
15
10
10V 5
0 0
100
20 40 60 80
ID - Drain Current (A)
100
Source-Drain Diode Forward
10 TJ=175°C
1 TJ=25°C
0.1 0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=64V 8 IDS=40A
7
6
5
4
3
2
1
0 0
20 40 60 80
QG - Gate Charge (nC)
100
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Avalanche Test Circuit and Waveforms
RU80100S
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd Rev. A.