RUS1Z20R2

Features VRRM= 150V IF(AV)=2x 10A Low Power Loss and High Efficiency High Surge Capability Low Leakage Current Low Forward Voltage Drop Lead Free and Green Devices Available Applications Rectifiers in SMPS Free Wheeling Diode DC-DC Converters RUS1Z20R2 Power Schottky Barrier Diode Pin Description TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VRRM VR Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) per Device Average Rectified Forward Current, TC=130°C per Diode IFSM TSTG TJ Peak Forward Surge Current,8.3ms Half Sine Wave Storage Temperature Range Operating Junction Temperature Mounted on Large Heat Sink RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Schottky Barrier Diode Rating Unit 150 150 20 10 150 -55 to 150 150 V V A A A °C °C 1.5 °C/W 62.5 °C/W Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 1 www.ruichips.com RUS1Z20R2 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RUS1Z20R2 Min. Typ. Max. Static Characteristics IR① Reverse Leakage Current VR=150V, TC=25°C VR=150V, TC=125°C 100 5 IF=5A, TC=25°C 0.75 - VF① Forward Voltage Drop IF=5A, TC=125°C IF=10A, TC=25°C 0.65 0.85 0.9 IF=10A, TC=125°C 0.75 0.8 Unit µA mA V V V V Notes: ①Pulse test, pulse width≤300µs, duty cycle≤2%. Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 2 www.ruichips.com ℃ RUS1Z20R2 Orde...