RUS6030M

Features VRRM= 60V IF(AV)=2x 15A HEBR® Technology Ultra-Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Low Leakage Current Lead Free and Green Devices Available Applications Rectifiers in SMPS AC/DC Adaptors DC-DC Converters RUS6030M High Efficiency Barrier Rectifier Pin Description 87 6 5 1 234 PIN1 PIN1 PDFN5060 PIN1,2 PIN5,6,7,8 PIN3,4 A1 K1/K2 A2 Absolute Maximum Ratings High Efficiency Barrier Rectifier Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VRRM① VR① VR(RMS)① Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage RMS Reverse Voltage IF(AV) per Device Average Rectified Forward Current, TC=130°C per Diode IFSM TSTG TJ Peak Forward Surge Current,8.3ms Half Sine Wave Storage Temperature Range Operating Junction Temperature Range Mounted on Large Heat Sink 60 60 42 30 15 430 -55 to 150 -55 to 150 V V V A A A °C °C RθJC RθJA② Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 1 °C/W 30 °C/W Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2014 1 www.ruichips.com RUS6030M Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RUS6030M Min. Typ. Max. Static Characteristics V(BR)R③ IR③ Reverse Breakdown Voltage per Diode Reverse Leakage Current per Diode IR=300µA VR=60V, TC=25°C VR=60V, TC=125°C 60 100 300 5 IF=2A, TC=25°C 0.32 0.35 IF=5A, TC=25°C VF③ Forward Voltage Drop per Diode I...