Automotive N-Channel MOSFET
www.vishay.com
SQM200N04-1m1L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) ...
Description
www.vishay.com
SQM200N04-1m1L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
TO-263-7L
40 0.0011 0.0013
200 Single
D
FEATURES TrenchFET® Power MOSFET
Package with Low Thermal Resistance
100 % Rg and UIS Tested AEC-Q101 Qualifiedd
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
G
Drain connected to Tab
GSS DS SS
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
S N-Channel MOSFET
TO-263-7L SQM200N04-1m1L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipationb
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 40 ± 20 200 200 200 600 100 500 375 125
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
PCB Mountc
SYMBOL RthJA RthJC
LIMIT 40 0.4
UNIT V
A
mJ W °C
UNIT °C/W
S12-2164-Rev. A, 24-Sep-12
1
Document Number: 62...
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