SQM50P08-25L

www.vishay.com SQM50P08-25L Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration TO-263 - 80 0.025 0.031 - 50 Single S FEATURES TrenchFET® Power MOSFET Package with Low Thermal Resistance 100 % Rg and UIS Tested AEC-Q101 Qualifiedd Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G G DS Top View D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 SQM50P08-25L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current TC = 25 °Ca TC = 125 °C VGS ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 80 ± 20 - 50 - 30 - 50 - 120 - 47 110 150 50 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 40 1 UNIT V A mJ W °C UNIT °C/W S12-1847-Rev. B, 30-Jul-12 1 Document Number: 67064 For technical ...