SQ7415AENW

www.vishay.com SQ7415AENW Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration Package -60 0.065 0.090 -16 Single PowerPAK 1212-8W PowerPAK® 1212-8W Single D D D 6 D 7 8 5 FEATURES TrenchFET® power MOSFET Low thermal resistance PowerPAK® 1212-8W package with 1.07 mm profile AEC-Q101 qualified Wettable flank terminals 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d TC = 25 °C a TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -16 -11 -16 -64 -23 26 53 17 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA RthJC 81 2.8 Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material)...