Automotive N-Channel MOSFET
www.vishay.com
SQ7414AEN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
Description
www.vishay.com
SQ7414AEN
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration
Package
60 0.026 0.036
16 Single PowerPAK 1212-8
PowerPAK® 1212-8 Single
D D8 D7 D6 5
FEATURES TrenchFET® power MOSFET Low thermal resistance PowerPAK® 1212-8
package with 1.07 mm profile PWM optimized 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
D
3.3 mm
1 Top View
3.3 mm
Marking Code: Q013
1 2S 3S 4S G
Bottom View
G N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 16 16 16 72 18 16 62 20
-55 to +175 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
PCB Mount c
SYMBOL RthJA RthJC
LIMIT 81 2.4
UNIT °C/W
Notes
a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. See so...
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