MPSA44

MPSA44 High Voltage Transistor Features: Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. NPN epitaxial planar silicon transistor. Designed for General Purpose Applications Requiring High Breakdown Voltages, Low Saturation Voltages and Low Capacitance. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H 1.53 K 12.70 - Dimensions : Millimetres Pin Configuration: 1. Collector 2. Base 3. Emitter Page 1 11/05/08 V1.1 MPSA44 High Voltage Transistor Absolute Maximum Ratings (Ta = 25°C unless otherwise specified) Parameters Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Tc = 25°C Operating and Storage Junction Temperature Range Thermal Resistance VCEO VCBO VEBO IC PTA PTC Tj, Tstg 400 500 6 300 625 1.5 -55 to +150 Junction to Case Junction to Ambient Rth (j-a) Rth (j-c) 83.3 200 Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameters Symbol Test Condition Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Cut off Current Emitter-Cut off Current DC Current Gain VCEO* VCES VCBO VEBO ICBO ICES IEBO hFE* IC = 1.0mA, IB = 0 IC = 100µA, VBE =0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 400V, IE = 0 VCE = 400V, IB = 0 VEB = 4V, IC = 0 IC ...