MPSA44
Preferred Device
High Voltage Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS...
MPSA44
Preferred Device
High Voltage
Transistor
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
400 Vdc
500 Vdc
6.0 Vdc
300 mAdc
625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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COLLECTOR 3
2 BASE
1 EMITTER
MARKING DIAGRAM
1 23
TO−92 (TO−226AA) CASE 29−11
STYLE 1
MPS A44 AYWWG
G
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb−Free strategy and so...