DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2461...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect
Transistor de-
signed for high speed switching applications.
FEATURES Low On-Resistance
RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)
Low Ciss Ciss = 1400 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings
15.0 ±0.3
3 ±0.1
12.0 ±0.2
PACKAGE DIMENSIONS (in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
13.5MIN.
4 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
100 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±20 A
Drain Current (pulse)*
ID(pulse)
±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
20 A
Single Avalanche Energy**
EAS
40 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1 2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1 2.54
123
1. Gate 2. Drain 3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body Diode
Gate Protection
Diode
Source
Document No. TC-2529 (O. D. No. TC-8078)
Date Published April 1995 P Printed in Japan
© 1995
2SK2461
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Sour...
