Document
Ordering number : EN6405F
CPH3116/CPH3216
Bipolar Transistor
(–)50V, (–)1A, Low VCE(sat), (PNP)NPN Single CPH3
http://onsemi.com
Applications
• Relay drivers, lamp drivers, motor drivers, flash
Features
• Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation
Specifications ( ): CPH3116
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCES VCEO VEBO IC ICP IB PC Tj
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings (--50)80 (--50)80 (--)50 (--)5 (--)1.0 (--)3 (--)200 0.9 150
--55 to +150
Unit V V V V A A mA W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7015A-003
2.9 3
CPH3116-TL-E 0.15 CPH3216-TL-E
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
1 0.95
2 0.4
0.05
1 : Base 2 : Emitter 3 : Collector CPH3
TL
Electrical Connection
3
CPH3116 3
11
CPH3216
0.9 2.8 0.2 0.6 1.6 0.6 0.2
AR
LOT No.
CR
LOT No.
CPH3116
2
CPH3216 2
Semiconductor Components Industries, LLC, 2013
September, 2013
O1012 TKIM/81006EA MSIM/62504 TSIM TB-00000308/83100 TS(KOTO) /21000 TS(KOTO) TA-2706 No.6405-1/7
CPH3116/CPH3216
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time
Symbol
ICBO IEBO hFE fT Cob
VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf
Conditions
VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA VCB=(--)10V, f=1MHz IC=(--)500mA, IB=(--)10mA IC=(--)300mA, IB=(--)6mA IC=(--)500mA, IB=(--)10mA IC=(--)10μA, IE=0A IC=(--)100μA,RBE=0Ω IC=(--)1mA, RBE=∞ IE=(--)10μA, IC=0A
See specified Test Circuit.
Switching Time Test Circuit
PW=20μs DC≤1%
INPUT
IB1 IB2
VR 50Ω
RB +
100μF
+ 470μF
OUTPUT RL
VBE= --5V
VCC=25V
IC=20IB1= --20IB2=500mA (For PNP, the polarity is reversed.)
Ordering Information
Device CPH3116-TL-E CPH3216-TL-E
Package CPH3 CPH3
Shippin.