1SV276

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit 10 ¾ ¾ ¾¾ 3 15 16 17 7.0 8.0 8.5 1.8 2.0 ¾ ¾ 0.22 0.4 V nA pF pF ¾ W 1 2003-04-02 1SV276 (Note) Note: dC = C (Ta) - C C (25) (25) ´ 100 (%) 2 2003-04-02 1SV276 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life...