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1SV277

Toshiba Semiconductor

Variable Capacitance Diode


Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 1SV277 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.3 (typ.) Low series resistance: rs = 0.42 Ω (typ.) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 1...



Toshiba Semiconductor

1SV277

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