KDZ100VW

SEMICONDUCTOR TECHNICAL DATA EL Driver System Application. FEATURES Small Package : USC Sharp breakdown characteristic. Normal Voltage Tolerance About 5.0% MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation Junction Temperature Storage Temperature Range PD * Tj Tstg 200 150 -55 150 Operating Temperature Topr -55 150 * Mounted on a glass epoxy circuit board of 20 20 , pad dimension of 4 4 . UNIT mW KDZ100VW Bi-DIRECTIONAL ZENER DIODE SILICON EPITAXIAL PLANAR DIODE B 1 G E A K F L H 2 D J C I MM 1. CATHODE 2. CATHODE DIM MILLIMETERS A 2.50+_ 0.1 B 1.25+_ 0.05 C 0.90 +_ 0.05 D 0.30+0.06/-0.04 E 1.70 +_0.05 F MIN 0.17 G 0.126+_ 0.03 H 0~0.1 I 1.0 MAX J 0.15+_ 0.05 K 0.4+_ 0.05 L 2 +4/-2 M 4~6 USC Marking 2 AW Type Name Lot No. 1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Zener Voltage Dynamic Impedan (Note1) (Note2) VZ IZ=1mA ZZ IZ=1mA Reverse Current IR VR=76V (Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal. 21 MIN. 95. 0 - TYP. - MAX. 105. 0 700 0.2 UNIT V A 2014. 3. 31 Revision No : 2 1/2 ZENER CURRENT IZ (A) POWER DISSIPATION P (mW) KDZ100VW 10m 1m 100µ Ta=25 C TYP. 10µ 1µ 100n 10n 1n 0 30 I Z - VZ 60 90 ZENER VOLTAGE VZ (V) 120 250 200 150 100 50 0 0 P - Ta * MOUNTED ON A GLASS EPOXY CIRCUIT BOARD OF 20x20mm PAD DIMENSION OF 4x4mm 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2014. 3. 31 Revision No : ...