Variable Capacitance Diode
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV284
VCO for V/UHF Band Radio
· High capacitance rat...
Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV284
VCO for V/UHF Band Radio
· High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 Ω (typ.) · Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Junction temperature Storage temperature range
Symbol
VR Tj Tstg
Rating
10 125 -55~125
Unit
V °C °C
1SV284
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
Symbol
Test Condition
VR IR C1 V C4 V C1 V/C4 V rs
IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz
¾ VR = 1 V, f = 470 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10 ¾ ¾
¾¾
3
15 ¾ 17
7.0 ¾ 8.5
1.8 2.0 ¾
¾ 0.22 0.4
V nA pF pF ¾ W
1 2003-04-02
1SV284
(Note)
Note:
dC
=
C
(Ta) - C C (25)
(25)
´ 100
(%)
2 2003-04-02
1SV284
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause los...
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