ECH8502

Ordering number : ENA1758A ECH8502 Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 http://onsemi.com Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free compliance Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Conditions PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Ratings (--50)100 (--)50 (--)6 (--)5 (--)30 (--)600 1.3 1.6 150 --55 to +150 Unit V V V A A mA W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-007 Top View 2.9 85 ECH8502-TL-H 0.15 0 to 0.02 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Emitter(NPN TR) 2 : Base(NPN TR) 3 : Emitter(PNP TR) 4 : Base(PNP TR) 5 : Collector(PNP TR) 6 : Collector(PNP TR) 7 : Collecto...