IRFP3703PBF

SMPS MOSFET PD - 95481 IRFP3703PbF Applications l Synchronous Rectification l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated HEXFET® Power MOSFET VDSS 30V RDS(on) max 0.0028Ω ID 210A† TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 210 † 100 † 1000 230 3.8 1.5 ± 20 5.0 -55 to + 175 Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typical SMPS Topologies Typ. ––– 0.24 ––– Max. 0.65 ––– 40 Units °C/W l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications l Offline High Power AC/DC Convertors using Synchronous Rectification Notes  through † are on page 8 www.irf.com 1 7/16/04 IRFP3703PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current 2.0 ...