Variable Capacitance Diode
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV302
CATV Tuning
· High capacitance ratio: C2 V/C25 ...
Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV302
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series resistance: rs = 1.05 Ω (typ.) · Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Peak reverse voltage Junction temperature Storage temperature range
Symbol
VR VRM
Tj Tstg
Rating
30 35 (RL = 10 kW)
125 -55~125
Unit
V V °C °C
1SV302
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
VR IR C2 V C25 V C2 V/C25 V rs
IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz
¾ VR = 5 V, f = 470 MHz
Note: Available in matched group for capacitance to 2.5%.
C (max) - C (min) C (min)
=< 0.025
(VR = 2~25 V)
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
30 ¾ ¾
V
¾ ¾ 10 nA
42 47 51 pF
2.1 2.6 3.1 pF
17 17.5 ¾
¾
¾ 1.05 1.25 W
1 2003-03-24
1SV302
2 2003-03-24
1SV302
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to ...
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