IRFP4137PBF

Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits   G D S IRFP4137PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 300V 56m 69m 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate S D G TO-247AC D Drain S Source Base part number Package Type IRFP4137PbF TO-247AC Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP4137PbF ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  Thermal Resistance   Parameter RJC Junction-to-Case  RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient  Max. 38 27 152 341 2.3 ± 20 8.9 -55 to + 175   300 10 lbf·in (1.1 N·m) Units A W W/°C V V/ns °C     541  Typ. ––– 0.24 ––– Max. 0.44 ––– 40 mJ Units °C/W 1 www.irf.com © 2012 International Rectifier October 30, 2012   IRFP4...