Power MOSFET
PD - 95055
IRFP4710PbF
Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies ...
Description
PD - 95055
IRFP4710PbF
Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies l Lead-Free
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014Ω
ID
72A
TO-247AC
Max. 72 51 300 190 1.2 ± 20 8.2
-55 to + 175
300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A
W W/°C
V V/ns
°C
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Notes through
are on page 8
www.irf.com
Typ. ––– 0.24 –––
Max. 0.81 ––– 40
Units °C/W
1
2/26/04
IRFP4710PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
G...
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