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IRFP7718PBF Dataheets PDF



Part Number IRFP7718PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFP7718PBF DatasheetIRFP7718PBF Datasheet (PDF)

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, .

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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate IR MOSFET StrongIRFET™ IRFP7718PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max ID (Silicon Limited) ID (Package Limited) 75V 1.45m 1.80m 355A 195A D G DS TO-247AC D Drain S Source Base part number Package Type IRFP7718PbF TO-247 Standard Pack Form Quantity Tube 25 Orderable Part Number IRFP7718PbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 6 ID = 100A 4 TJ = 125°C 2 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 400 Limited By Package 300 200 100 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 1 2015-11-30   IRFP7718PbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Max. 355 250 195 1590 517 3.5 ± 20 -55 to + 175   300 10 lbf·in (1.1 N·m)   Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter RJC Junction-to-Case  RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient  1160 2004 See Fig 14, 15, 23a, 23b Typ. ––– 0.24 ––– Max. 0.29 ––– 40 Units A W W/°C V °C   mJ A mJ Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Typ. ––– 42 1.45 1.60 ––– ––– ––– ––– ––– 0.9 Max. ––– ––– 1.80 ––– 3.7 1.0 150 100 -100 ––– Units V mV/°C m V µA nA  Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 2mA  VGS = 10V, ID = 100A  VGS = 6V, ID = 50A  VDS = VGS, ID = 250µA VDS =75 V, VGS = 0V VDS =75V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V. ISD  100A, di/dt  1279A/µs, VDD  V(BR)DSS, TJ 175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V. .  Pulse drain current is limited at 780A by source bonding technology. 2 2015-11-30   IRFP7718PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Min. Typ. 420 ––– ––– 552 ––– 119 ––– 168 ––– 384 ––– 58 ––– 164 ––– 266 ––– 160 ––– 29550 ––– 2270 ––– 1395 ––– 2010 Max. ––– 830 .


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