Document
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
D
G S
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
G Gate
IR MOSFET StrongIRFET™
IRFP7718PbF
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max
ID (Silicon Limited) ID (Package Limited)
75V
1.45m 1.80m 355A
195A
D
G DS TO-247AC
D Drain
S Source
Base part number Package Type
IRFP7718PbF
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number IRFP7718PbF
RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A)
6 ID = 100A
4
TJ = 125°C 2
TJ = 25°C
0 4
8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
400 Limited By Package
300
200
100
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFP7718PbF
Absolute Maximium Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max. 355 250 195 1590 517
3.5 ± 20
-55 to + 175
300 10 lbf·in (1.1 N·m)
Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
1160 2004
See Fig 14, 15, 23a, 23b
Typ. ––– 0.24 –––
Max. 0.29 ––– 40
Units
A
W W/°C
V °C
mJ A mJ
Units °C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th) IDSS
IGSS RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance
Min. 75
–––
––– ––– 2.1 ––– ––– ––– ––– –––
Typ. –––
42
1.45 1.60 ––– ––– ––– ––– ––– 0.9
Max. –––
–––
1.80 ––– 3.7 1.0 150 100 -100 –––
Units V
mV/°C
m V µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2mA
VGS = 10V, ID = 100A VGS = 6V, ID = 50A VDS = VGS, ID = 250µA VDS =75 V, VGS = 0V VDS =75V,VGS = 0V,TJ =125°C VGS = 20V VGS = -20V
Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1279A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V. . Pulse drain current is limited at 780A by source bonding technology.
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IRFP7718PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss
Coss eff.(ER)
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time
Turn-Off Delay Time
Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Min. Typ. 420 ––– ––– 552 ––– 119 ––– 168 ––– 384 ––– 58 ––– 164 ––– 266 ––– 160 ––– 29550 ––– 2270 ––– 1395
––– 2010
Max. ––– 830 .