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1SV303

Toshiba Semiconductor

Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV303 CATV Tuning · High capacitance ratio: C2 V/C25 ...


Toshiba Semiconductor

1SV303

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV303 CATV Tuning · High capacitance ratio: C2 V/C25 V = 17.5 (typ.) · Low series resistance: rs = 1.05 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV303 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz ¾ VR = 5 V, f = 470 MHz Note: Available in matched group for capacitance to 2.5%. C (max) - C (min) C (min) =< 0.025 (VR = 2~25 V) Marking JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Min Typ. Max Unit 30 ¾ ¾ V ¾ ¾ 10 nA 42 47 51 pF 2.1 2.6 3.1 pF 17 17.5 ¾ ¾ ¾ 1.05 1.25 W 1 2003-03-24 1SV303 2 2003-03-24 1SV303 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to...




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