Silicon diode
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV307
1SV307
VHF Tuner Band Switch Applications
• Small package • Low serie...
Description
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV307
1SV307
VHF Tuner Band Switch Applications
Small package Low series resistance: rs = 1.1 Ω (typ.) Small total capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Forward current Junction temperature Storage temperature range
VR 30 V
IF 50 mA
Tj 125 °C
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Forward voltage Total capacitance Series resistance 1 Series resistance 2
Symbol
VR IR VF CT rs (1) rs (2)
Test Condition
IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, f = 1.5 GHz
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
30 ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ 0.95 1.0 ⎯ 0.3 0.5 ⎯ 1.0 1.5 ⎯ 1.1 ⎯
V μA V pF Ω Ω
Start of c...
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