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1SV307

Toshiba Semiconductor

Silicon diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV307 1SV307 VHF Tuner Band Switch Applications • Small package • Low serie...


Toshiba Semiconductor

1SV307

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Description
TOSHIBA Diode Silicon Epitaxial Pin Type 1SV307 1SV307 VHF Tuner Band Switch Applications Small package Low series resistance: rs = 1.1 Ω (typ.) Small total capacitance: CT = 0.3 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 50 mA Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Total capacitance Series resistance 1 Series resistance 2 Symbol VR IR VF CT rs (1) rs (2) Test Condition IR = 10 μA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, f = 1.5 GHz Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit 30 ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ 0.95 1.0 ⎯ 0.3 0.5 ⎯ 1.0 1.5 ⎯ 1.1 ⎯ V μA V pF Ω Ω Start of c...




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