Document
SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER
FEATURES Small Package : SOT-23 Sharp breakdown characteristic.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature
SYMBOL PD Tj Tstg Topr
RATING 200 150
-55 150 -55 150
UNIT mW
Z02W100V
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. NC 2. ANODE 3. CATHODE
3 21
SOT-23
Marking
10AType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Zener Voltage Dynamic Impedan
(Note1) (Note2)
VZ IZ=1mA ZZ IZ=1mA
Reverse Current
IR VR=76V
(Note 1) VZ is tested with pulsed (40ms) (Note 2) VZ is measured at IZ by given a very small A.C current signal.
MIN. 95. 0
-
TYP. -
MAX. 105. 0 700
0.2
UNIT V
A
2007. 2. 21
Revision No : 0
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REVERSE SURGE POWER DISSIPATION PZSM (W)
Z02W100V
PZSM
PZSM - tw
1K Ta=25 C Repetitive
100 tr
10
1 1µ
10µ 100µ 1m 10m 100m
PULSE WIDTH TIME tW (S)
IZ - VZ
10m Ta=25 C TYP.
1m
100µ 10µ 1µ
100n
10n
1n 0
30 60
90
ZENER VOLTAGE VZ (V)
120
TEMPERATURE COEFFICIENT OF ZENER DIODE γZ (% / C)
SS
POWER DISSIPATION P (mW)
P - Ta
250 * MOUNTED ON A GLASS EPOXY CIRCUIT BOARD
200 OF 20x20mm PAD DIMENSION OF 4x4mm
150
100
50
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
γZ - VZ
0.12 TYP.
0.11 0.10 0.09
%/ C
mV/ C
140 120 100 80
0.08 60
0.07 40
0 SS
20
0 40 50 60 70 80 90 100 110 120 130
ZENER VOLTAGE VZ (V)
TEMPERATURE COEFFICIENT OF ZENER DIODE γZ (mW / C)
ZENER CURRENT IZ (A)
2007. 2. 21
Revision No : 0
2/2
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