PBSS4350SS

PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP PBSS4350SS SOT96-1 Name SO8 NPN/PNP complement PBSS4350SPN PNP/PNP complement PBSS5350SS 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per transistor VCEO IC ICM collector-emitter voltage collector current peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 mA Min Typ Max Unit - - 50 V - - 2.7 A --5 A [1] - 90 130 mΩ NXP Semiconductors PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 base TR2 collector TR2 collector TR2 collector TR1 collector TR1 Simplified outline Symbol 8 5 8765 TR1 TR2 1 4 1234 006aaa...