USFB13L

SEMICONDUCTOR TECHNICAL DATA USFB13L SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free Wheeling, and Polarity Protection Applications. B AG FE 2 C ED 1 CATHODE MARK H C APPLICATION Switching Power Supply. Reversed Battery Connection Protection. DC/DC Converter. Cellular Phones. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation Junction Temperature Storage Temperature Range VRRM IO IFSM PD * Tj Tstg 30 V 1A 22 A 667 -40 125 -40 125 mW * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) J 1. ANODE 2. CATHODE I DIM MILLIMETERS A 1.9 +_ 0.1 B 2.5 +_ 0.1 C 0.61 +_ 0.05 D 0.8 +_ 0.1 E 0.91 +_ 0.05 F 1.2 +_ 0.1 G 1.3 +_ 0.1 H 0.46 +_ 0.1 I 0.11 +_ 0.05 J 0.6 +_ 0.1 USF Marking Type Name Lot No. BB CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Peak Forward Voltage VFM (1) VFM (2) VFM (3) Repetitive Peak Reverse Current IRRM (1) IRRM (2) Junction Capacitance Cj TEST CONDITION IFM=0.1A IFM=0.7A IFM=1.0A VRRM=5V VRRM=30V VR=10V, f=1.0MHz MIN. - TYP. 0.25 0.33 0.39 50 0.5 40 MAX. - 0.37 1 - UNIT V A mA pF 2005. 12. 1 Revision No : 2 1/3 INSTANTANEOUS FORWARD CURRENT I F (A) USFB13L IF - VF 10 3 Tj =125 C 1 ...