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1SV310

Toshiba Semiconductor

Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 1SV310 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V ...



1SV310

Toshiba Semiconductor


Octopart Stock #: O-96298

Findchips Stock #: 96298-F

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Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 1SV310 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.1 (typ.) Low series resistance: rs = 0.28 Ω (typ.) Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Min Typ. Max Unit 10 ⎯ ⎯ ⎯⎯ 3 9.7 ⎯ 11.1 4.45 ⎯ 5.45 1.8 2.1 ⎯ ⎯ 0.28 0.4 V nA pF pF ⎯ Ω 1 2007-11-01 1SV310 2 2007-11-01 1SV310 RES...




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