Stansard SCRs
SEMICONDUCTOR
6PT Series RRooHHSS
Stansard SCRs, 6A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 6
600 to 1000 1...
Description
SEMICONDUCTOR
6PT Series RRooHHSS
Stansard SCRs, 6A
Main Features
Symbol IT(RMS) VDRM/VRRM
IGT
Value 6
600 to 1000 15
Unit A V mA
DESCRIPTION
The 6PT series of silicon controlled rectifiers are high performance glass passivated technology, and are designed for power supply up to 400Hz on resistive or inductive load.
A
K A G
TO-251 (I-PAK) (6PTxxF)
A
A
KA G
TO-252 (D-PAK) (6PTxxG)
K AG
KAG
TO-220AB (Non-lnsulated) (6PTxxA)
TO-220AB (lnsulated) (6PTxxAI)
2(A)
3(G) 1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave (180° conduction angle )
Average on-state current (180° conduction angle)
IT(RMS) IT(AV)
TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated
Tc=110°C Tc=105°C Tc=110°C Tc=105°C
Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C)
I2t Value for fusing
ITSM I2t
F =50 Hz F =60 Hz
tp = 10 ms
t = 20 ms t = 16.7 ms
Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current Maximum gate power Average gate power dissipation Repetitive peak off-state voltage
Repetitive peak reverse voltage Storage temperature range
dI/dt
IGM PGM PG(AV) VDRM VRRM Tstg
F = 60 Hz
Tp = 20 µs Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC Tj = 125ºC
Tj =125ºC
Operating junction temperature range
Tj
VALUE 6
3.8 70 73 24.5 50 4 10 1
600 to 1000
- 40 to + 150 - 40 to + 125
UNIT A
A
A A2s A/µs A W W V
ºC
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SEMICONDUCTOR
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