BLP10H610

BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1. Application performance Test signal f (MHz) CW 27 40 60 80 88 to 108 400 to 450 950 to 1225 Pulsed RF [1] 860 1190 to 1410 DVB-T 860 [1] tp= 100 s;  = 10 %. VDS PL Gp (V) (W) (dB) 50 10 26.7 50 20 25 50 19 24 50 19 25 50 16 25 50 >14 >25.5 50 >13 >16 50 10 22 45 11 >14 50 1 >21 D (%) 46 65 65 67 62 >62 >42 60 - 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1400 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP10H610 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin Description 1, 6, 7, 12 n.c. 2, 3 gate1 4, 5 gate2 8, 9 drain2 10, 11 drain1 13 source Simplified outline          [1]    7UDQVSDUHQWWRSYLHZ [1] Connected to flange. 3. Ordering information Graphic symbol      DDD Table 3. Ordering information Type number Package Name Description Version BLP10H610 HVSON12 plastic...