1SV314

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 1SV314 VCO for UHF Band Radio z High Capacitance Ratio : C0.5 V / C2.5 V = 2.5 (Typ.) z Low Series Resistance : rs = 0.35 Ω (Typ.) z Useful for Small Size Tuner Unit: mm Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Junction Temperature Storage Temperature Range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling JEDEC — JEITA — TOSHIBA 1−1G1A Weight:0.0014g (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio Series Resistance SYMBOL TEST CONDITION VR IR C0.5 V C2.5 V C0.5 V / C2.5 V rs IR = 1μA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz — VR = 1 V, f = 470 MHz Marking MIN TYP. MAX UNIT 10 — — V — — 3 nA 7.3 — 8.4 pF 2.75 — 3.4 pF 2.4 2.5 — — — 0.35 0.45 Ω 1 2007-11-01 1SV314 2 ...