1SV316

Ordering number:ENN6262 Silicon Epitaxial Pin Diode 1SV316 Variabe resistance Attenuator Use Features · Ultrasmall-sized package facilitates high-density mounting and permits 1SV316-applied equipment to be made smaller. · Small interterminal capacitance (C=0.23pF typ). Electrical Connection Cathode / Anode 3 Package Dimensions unit:mm 1251A [1SV316] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Anode 2 Cathode 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Forward Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VR IF P Tj Tstg Conditions 1 : Anode 2 : Cathode 3 : Cathode/Anode SANYO : CP 0.8 1.1 Ratings 50 50 150 125 –55 to +125 Unit V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Reverse Current Forward Voltage Interterminal Capacitance Series Resistance Symbol VR IR VF C rs IR=10µA VR=50V IF=50mA VR=50V, f=1MHz IF=10µA, f=100MHz IF=10mA, f=100MHz 4 Conditions Ratings min 50 0.1 0.95 0.23 2400 6 9 1.0 typ max Unit V µA V pF Ω Ω Note ) The specifications shown above are for each individual diode. Marking : UV Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult ...