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1SV323

Toshiba Semiconductor

Silicon Diode


Description
TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 1SV323 TCXO/VCO High capacitance ratio: C1V / C4V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C T...



Toshiba Semiconductor

1SV323

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