1SV325

TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 1SV325 TCXO/VCO High capacitance ratio: C1V / C4V = 4.3 (typ.) Low series resistance: rs = 0.4 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C1V C4V C1V / C4V rs IR = 1 μA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 4 V, f = 100 MHz Note: Signal level when capacitance is measured: Vsig = 500 mVfms Marking Min Typ. Max Unit 10 ⎯ ⎯ V ⎯ ⎯ 3 nA 44 ⎯ 49.5 pF 9.2 ⎯ 12 pF 4 4.3 ...