uPD70F3380

Data Sheet V850ES/FJ3 32-bit Single-Chip Microcontroller Hardware µPD70F3378(A) µPD70F3378(A1) µPD70F3378(A2) µPD70F3379(A) µPD70F3379(A1) µPD70F3379(A2) µPD70F3380(A) µPD70F3380(A1) µPD70F3380(A2) µPD70F3381(A) µPD70F3381(A1) µPD70F3381(A2) µPD70F3382(A) µPD70F3382(A1) µPD70F3382(A2) Document No. U18567EE1V3DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany Data Sheet U18567EE1V3DS00 2 V850ES/FJ3 Notes for CMOS Devices 1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2. Handling of unused input pins for CMOS No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it...