VS3060AS

VS3060AS 30V/20A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦Green Product Description VS3060AS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VGS V (BR)DSS Gate-Source Voltage Drain-Source Breakdown Voltage TJ Maximum Junction Temperature T STG I S Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink I DM Pulse Drain Current Tested (Sillicon Limit) ID P D R θJC GS Co...