N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 7N10Z
7A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N10Z is an N-Channel enhance...
Description
UNISONIC TECHNOLOGIES CO., LTD 7N10Z
7A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and the commutation mode.
The UTC 7N10Z is generally applied in low voltage applications, such as DC motor controls, audio amplifiers and high efficiency switching DC/DC converters.
FEATURES
* RDS(ON) < 0.35Ω @ VGS =10V, ID =3.5A * Fast Switching * Improved dv/dt Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N10ZL-TN3-R
7N10ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment 123 GDS
Packing Tape Reel
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-762.B
7N10Z
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-762.B
7N10Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage Gate-Source Voltage
VDSS VGSS
100 V ±20 V
Continuous Drain Current TC =25°C
ID
7A
Pulsed Drain Current (Note 2)
IDM
28 A
Single Pulsed Avalanche Energy (Note 3) Power Dissipation Derate above 25°C
EAS PD
50 mJ 2.5 W 0.02 W/°C
Operating Junction Temperature
TJ
-5...
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