IPA80R1K4CE

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPA80R1K4CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPA80R1K4CE 1Description CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound Qualifiedforconsumergradeapplications Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. TO-220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C RDS(on),max 800 1400 V mΩ Qg.typ 23 nC ID,pulse 12 A Eoss@400V 1.8 µJ Body diode di/dt 400 A/µs Type/OrderingCode IPA80R1K4CE Package PG-TO 220 FullPAK Marking 8R1K4CE RelatedLinks see Appendix A Final Data Sheet 2 Rev.2.1,2015-06-23 800VCoolMOS™CEPowerTransistor IPA80R1K4CE TableofContents Description . . . . . . . . ...