N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT2N10
2.0A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT2N10 is N-Channel enhanc...
Description
UNISONIC TECHNOLOGIES CO., LTD UT2N10
2.0A, 100V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages.
The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.
FEATURES
* RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A
* Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics
SYMBOL
Drain
Power MOSFET
Gate
Source
www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-511.J
UT2N10
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT2N10L-AA3-R
UT2N10G-AA3-R
UT2N10L-AE3-R
UT2N10G-AE3-R
UT2N10L-AE3S-R
UT2N10G-AE3S-R
UT2N10L-TN3-R
UT2N10G-TN3-R
UT2N10L-T92-B
UT2N10G-T92-B
UT2N10L-T92-K
UT2N10G-T92-K
UT2N10L-T9N-B
UT2N10G-T9N-B
UT2N10L-T9N-K
UT2N10G-T9N-K
UT2N10L-T9N-A-B
UT2N10G-T9N-A-B
UT2N10L-T9N-A-K
UT2N10G-T9N-A-K
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223 SOT-23 SOT-23S TO-252 TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-92NL
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
S
D
G
S
D
G
D
...
Similar Datasheet