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UT2N10

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhanc...


Unisonic Technologies

UT2N10

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Description
UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off power control directly from logic circuit supply voltages. The UTC UT2N10 is universally applied in logic level (5V) driving sources, such as automotive switching, solenoid drivers and programmable controllers.  FEATURES * RDS(ON) ≤ 0.32 Ω @ VGS =10V, ID =2.0A RDS(ON) ≤ 0.38 Ω @ VGS =4.5V, ID =2.0A * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics  SYMBOL Drain Power MOSFET Gate Source www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-511.J UT2N10  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2N10L-AA3-R UT2N10G-AA3-R UT2N10L-AE3-R UT2N10G-AE3-R UT2N10L-AE3S-R UT2N10G-AE3S-R UT2N10L-TN3-R UT2N10G-TN3-R UT2N10L-T92-B UT2N10G-T92-B UT2N10L-T92-K UT2N10G-T92-K UT2N10L-T9N-B UT2N10G-T9N-B UT2N10L-T9N-K UT2N10G-T9N-K UT2N10L-T9N-A-B UT2N10G-T9N-A-B UT2N10L-T9N-A-K UT2N10G-T9N-A-K Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 SOT-23 SOT-23S TO-252 TO-92 TO-92 TO-92NL TO-92NL TO-92NL TO-92NL Power MOSFET Pin Assignment 1 2 3 G D S G S D G S D G D ...




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