POWER MOSFET. UT3458 Datasheet

UT3458 MOSFET. Datasheet pdf. Equivalent

UT3458 Datasheet
Recommendation UT3458 Datasheet
Part UT3458
Description N-CHANNEL POWER MOSFET
Feature UT3458; UNISONIC TECHNOLOGIES CO., LTD UT3458 4.1A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT3458 .
Manufacture Unisonic Technologies
Datasheet
Download UT3458 Datasheet




Unisonic Technologies UT3458
UNISONIC TECHNOLOGIES CO., LTD
UT3458
4.1A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UT3458 is N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON) and low gate charge. This device can
be operated with 4.5V low gate voltage.
FEATURES
* VDS=60V
* ID =4.1A
* RDS(ON)<0.1@ VGS=10V, ID=3.2A
RDS(ON)<0.128@ VGS=4.5V, ID=2.8A
SYMBOL
Power MOSFET
65 4
1 23
SOT-26
ORDERING INFORMATION
Ordering Number
UT3458G-AG6-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-26
Pin Assignment
123456
Packing
D D G S D D Tape Reel
MARKING
654
34EUG
123
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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Unisonic Technologies UT3458
UT3458
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
60
±20
V
V
Drain Current
Continuous TA=25°C
(Note 2, 3) TA=70°C
ID
4.1
3.2
A
A
Pulsed
Power Dissipation (Note 2, 3)
IDM 15
PD 2
A
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied..
2. Surface Mounted on FR4 Board.
3. t 5 sec
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Unisonic Technologies UT3458
UT3458
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=70°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current
VGS(TH)
RDS(ON)
ID(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=3.2A
VGS=4.5V, ID=2.8A
VGS=10V, VDS=5V
SWITCHING PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tD(ON)
tR
tD(OFF)
tF
VDS =30 V, VGS = 0V, f = 1MHz
VDS=10V, VDS=48V, ID=3.2A
VDS=4.5V, VDS=48V, ID=3.2A
VDS=4.5V, VDS=48V, ID=3.2A
VDD=30V, ID2.5A, RL=12,
VGEN=4.5V, RG=1(Note 1, 2)
VDD=30V, ID2.5A, RL=12,
VGEN=10V, RG=2.5(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=2.5A, VGS=0V
Body Diode Reverse Recovery Time
tRR IF=2.5A, di/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Guaranteed by design, not subject to production testing
Power MOSFET
MIN TYP MAX UNIT
60 V
1 µA
10 µA
+100 nA
-100 nA
1.5 3
0.082 0.1
0.105 0.128
10
V
A
350
40
20
7.1 11
3.5 5.5
1.1
0.95
16 25
17 30
12 20
10 15
5 10
12 20
18 30
10 15
PF
nC
ns
2.9 A
10 A
0.8 1.2 V
25 50 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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