P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT3P06
3A, 60V (D-S) P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT3P06 is a P-channel e...
Description
UNISONIC TECHNOLOGIES CO., LTD UT3P06
3A, 60V (D-S) P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UT3P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.
This UTC UT3P06 can be operated with -4.5V low gate voltage.
FEATURES
* RDS(ON) < 220mΩ @ VGS=-10V, ID=-3A RDS(ON) < 310mΩ @ VGS=-4.5V, ID=-1.9A
* Low gate charge (Typically 7nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Package 1
Pin Assignment 2345
6
Packing
UT3P06G-AE3-R
SOT-23 S G D - - - Tape Reel
UT3P06G-AG6-R
SOT-26 D D G S D D Tape Reel
Note: Pin Assignment: S: Source G: Gate D: Drain
MARKING
SOT-23
3P06G
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
SOT-26
1 of 3
QW-R502-673.E
UT3P06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage
Drain Current
Avalanche Current (L=0.1mH)
Power Dissipation (Note 1, 2)
Junction Temperature Storage Temperature
THERMAL DATA
Continuous Pulsed
SOT-23 SOT-26
SYMBOL VDSS VGSS ID IDM IAR
PD
TJ TSTG
RATINGS -60 ±20 -3 -10 -7 0.35 1.1 +150
-55~+150
UNIT V V A A A
W
°C °C
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1,2)
SOT-23 SOT-26
θJA
350 110
°C/W
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation...
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