N-CHANNEL ENHANCEMENT Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The UT6898 uses advanced trench technology to...
Description
UNISONIC TECHNOLOGIES CO., LTD UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The UT6898 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 14 mΩ @ VGS=4.5V, ID=9.4A * RDS(ON) ≤ 18 mΩ @ VGS=2.5V, ID=8.3A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
(7) (8) D1
(5) (6) D2
(2) (4) G1 G2
Power MOSFET
SOP-8
S1 S2 (1) (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT6898L-S08-R
UT6898G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8 S: Source
Pin Assignment 12345678
Packing
S G S G D D D D Tape Reel
UT6898G-S08-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-239.D
UT6898
MARKING
876 5
UTC UT6898
1234
Date Code
L: Lead Free G: Halogen Free Lot Code
PIN CONFIGURATION
Source1 1 Gate1 2
Source2 3 Gate2 4
Power MOSFET
8 Drain1 7 Drain1 6 Drain2 5 Drain2
UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw
2 of 8
QW-R502-239.D
UT6898
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dis...
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