UT75N03

UNISONIC TECHNOLOGIES CO., LTD UT75N03 75A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UT75N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 7mΩ @ VGS=10V, ID=30A * RDS(ON) <10mΩ @ VGS=4.5V, ID=20A  SYMBOL 2.Drain 1 1 1 TO-220 TO-251 TO-252 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT75N03L-TA3-T UT75N03G-TA3-T UT75N03L-TM3-T UT75N03G-TM3-T UT75N03L-TN3-R UT75N03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-327.E UT75N03 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 75 A Pulsed Drain Current (Note 2) IDM 225 A Single Pulsed Avalanche Current (Note 3) IAS 100 A Single Pulsed Avalanche Energy (Note 3) EAS 228 mJ Power Dissipation (TC = 25°С) TO-220 TO-251/ TO-252 PD 75 89 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum...