UTD36N03

UNISONIC TECHNOLOGIES CO., LTD UTD36N03 N-CHANNEL ENHANCEMENT MODE  FEATURES * RDS(ON) < 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD36N03L-TA3-T UTD36N03G-TA3-T UTD36N03L-TN3-T UTD36N03G-TN3-T UTD36N03L-TN3-R UTD36N03G-TN3-R Package TO-220 TO-252 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-179.B UTD36N03 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 30 V ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) ID 43.4 A IDM 173.6 A Power Dissipation TO-220 TO-252 PD 1.9 W 1.6 W Junction Temperature Storage Temperature TJ TSTG +175 -55 ~ +175 °С °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction-to-Ambient TO-220 TO-252 SYMBOL θJA RATINGS 62.5 75 UNIT °С/W °С/W  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate...