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UNISONIC TECHNOLOGIES CO., LTD
10N65-Q
10A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
The UTC 10N65-Q is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON) < 1.0Ω @ VGS=10V, ID = 5 A * High Switching Speed * Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N65L-TA3-T
10N65G-TA3-T
TO-220
10N65L-TF3-T
10N65G-TF3-T
TO-220F
10N65L-TF1-T
10N65G-TF1-T
TO-220F1
10N65L-TF2-T
10N65G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS GDS
Packing
Tube Tube Tube Tube
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-091.a
10N65-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS IAR
±30 V 10 A
Drain Current
Continuous Pulsed (Note 2)
ID IDM
10 A 38 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS dv/dt
350 mJ 4.5 V/ns
TO-220
156 W
Power Dissipation
TO-220F/TO-220F1
PD
50 W
TO-220F2
48 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL θJA
θJC
RATING 62.5 0.8 2.5 2.6
UNIT °C/W °C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R205-091.a
10N65-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance
CISS COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time Turn-Off Delay Time
tR tD(OFF)
VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2)
Turn-Off Fall Time
tF
Total.