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10N65-Q Dataheets PDF



Part Number 10N65-Q
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 10N65-Q Datasheet10N65-Q Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 10N65-Q 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65-Q is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  FEATURES * RDS(ON) < 1.0Ω @ VGS=10V, ID = 5 A * High Switching Speed * Improved dv/dt capability  SYMBOL Power MOSFET .

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UNISONIC TECHNOLOGIES CO., LTD 10N65-Q 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65-Q is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  FEATURES * RDS(ON) < 1.0Ω @ VGS=10V, ID = 5 A * High Switching Speed * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N65L-TA3-T 10N65G-TA3-T TO-220 10N65L-TF3-T 10N65G-TF3-T TO-220F 10N65L-TF1-T 10N65G-TF1-T TO-220F1 10N65L-TF2-T 10N65G-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tube  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-091.a 10N65-Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±30 V 10 A Drain Current Continuous Pulsed (Note 2) ID IDM 10 A 38 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 350 mJ 4.5 V/ns TO-220 156 W Power Dissipation TO-220F/TO-220F1 PD 50 W TO-220F2 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=7mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient TO-220 Junction to Case TO-220F/TO-220F1 TO-220F2 SYMBOL θJA θJC RATING 62.5 0.8 2.5 2.6 UNIT °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R205-091.a 10N65-Q Power MOSFET  ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance CISS COSS VDS=25V, VGS=0V, f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time Turn-Off Delay Time tR tD(OFF) VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Fall Time tF Total.


UTD36N03 10N65-Q MC68HC912BL16


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