Document
HSMS-280x
Surface Mount RF Schottky Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications.
Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.
Features
x Surface Mount Packages x High Breakdown Voltage x Low FIT (Failure in Time) Rate* x Six-sigma Quality Level x Single, Dual and Quad Versions x Tape and Reel Options Available x Lead-free
* For more information see the Surface Mount Schottky Reliability Data Sheet.
Package Lead Code Identification, SOT-323 (Top View)
SINGLE
SERIES
Package Lead Code Identification, SOT-363 (Top View)
HIGH ISOLATION UNCONNECTED PAIR
654
UNCONNECTED TRIO
654
B COMMON ANODE
E
C COMMON CATHODE
F
Package Lead Code Identification, SOT-23/SOT-143 (Top View)
SINGLE 3
SERIES 3
COMMON
ANODE 3
COMMON
CATHODE 3
123 K
COMMON CATHODE QUAD 654
123 M
BRIDGE QUAD 654
123 P
123 L
COMMON ANODE QUAD 654
123 N
RING QUAD 654
123 R
12 #0
UNCONNECTED PAIR
34
12 #2
BRIDGE QUAD 34
12 #3
12 #4
1 #5 2
1 #8 2
GUx
Pin Connections and Package Marking, SOT-363
Notes: 1 6 1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
25
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
34
Absolute Maximum Ratings[1] TC = 25°C
Symbol
Parameter
If Forward Current (1 μs Pulse) PIV Peak Inverse Voltage Tj Junction Temperature Tstg Storage Temperature Tjc Thermal Resistance[2]
Unit SOT-23/SOT-143 SOT-323/SOT-363
Amp 1
1
V Same as VBR °C 150
Same as VBR 150
°C -65 to 150
-65 to 150
°C/W 500
150
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TA = 25°C, Single Diode [3]
Part Number HSMS[4] 2800 2802 2803 2804 2805 2808 280B 280C 280E 280F
Package Marking
Code A0 A2 A3 A4 A5 A8 A0 A2 A3 A4
280K
AK
280L
AL
280M
H
280N
N
280P
AP
280R
O
Test Conditions
Lead Code Configuration
0 Single
Minimum Breakdown
Voltage VBR (V)
2 Series
3 Common Anode
4 Common Cathode
5 Unconnected Pair
8 Bridge Quad[4]
B Single
C Series
E Common Anode
70
F Common Cathode
K
High Isolation Unconnected Pair
L Unconnected Trio
M Common Cathode Quad
N Common Anode Quad
P Bridge Quad
R Ring Quad
IR = 10 mA
Maximum Forward Voltage VF (mV)
410
IF = 1 mA
Maximum Forward Voltage VF (V) @ IF (mA)
Maximum Reverse Leakage IR (nA) @ VR (V)
1.0 @ 15
200 @ 50
Notes: 1. DVF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. DCTO for diodes in pairs and quads is 0.2 pF maximum. 3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2 Ω at 25°C and If = 5 mA.
Maximum Capacitance
CT (pF)
2.0
VF = 0 V f = 1 MHz
Typical Dynamic Resistance RD (Ω)[5]
35
IF = 5 mA
2
Quad Capacitance
Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Avago defines this measurement as “CM”, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below.
In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula
CDIAGONAL = __C_1_x__C_2 + ___C_3_x_C_4
C1 + C2 C3 + C4
A C1 C3
C
C2 C4 B
The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula
CADJACENT = C1 + _______1_____ –1– + –1– + –1– C2 C3 C4
This information does not apply to cross-over quad diodes.
Linear Equivalent Circuit, Diode Chip
Rj RS
Cj
RS = series resistance (see Table of SPICE parameters)
C j = junction capacitance (see Table of SPICE parameters)
Rj =
8.33 X 10-5 nT Ib + Is
where
Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, K
n = ideality factor (see table of SPICE parameters)
Note: To effectively model the packaged HSMS-280x product, please refer to Application Note AN1124.
SPICE Parameters
Parameter Units BV V CJ0 pF EG eV IBV A IS A N RS Ω PB V PT M
HSMS-280x 75 1.6 0.69 E-5 3.00E-08 1.08 30 0.65 2 0.5
3
Typical Perfor.