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HSMS-2800 Dataheets PDF



Part Number HSMS-2800
Manufacturers AVAGO
Logo AVAGO
Description Surface Mount RF Schottky Barrier Diodes
Datasheet HSMS-2800 DatasheetHSMS-2800 Datasheet (PDF)

HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, as.

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HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The HSMS-280x series of diodes is optimized for high voltage applications. Note that Avago’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Features x Surface Mount Packages x High Breakdown Voltage x Low FIT (Failure in Time) Rate* x Six-sigma Quality Level x Single, Dual and Quad Versions x Tape and Reel Options Available x Lead-free * For more information see the Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification, SOT-323 (Top View) SINGLE SERIES Package Lead Code Identification, SOT-363 (Top View) HIGH ISOLATION UNCONNECTED PAIR 654 UNCONNECTED TRIO 654 B COMMON ANODE E C COMMON CATHODE F Package Lead Code Identification, SOT-23/SOT-143 (Top View) SINGLE 3 SERIES 3 COMMON ANODE 3 COMMON CATHODE 3 123 K COMMON CATHODE QUAD 654 123 M BRIDGE QUAD 654 123 P 123 L COMMON ANODE QUAD 654 123 N RING QUAD 654 123 R 12 #0 UNCONNECTED PAIR 34 12 #2 BRIDGE QUAD 34 12 #3 12 #4 1 #5 2 1 #8 2 GUx Pin Connections and Package Marking, SOT-363 Notes: 1 6 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. 25 ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. 34 Absolute Maximum Ratings[1] TC = 25°C Symbol Parameter If Forward Current (1 μs Pulse) PIV Peak Inverse Voltage Tj Junction Temperature Tstg Storage Temperature Tjc Thermal Resistance[2] Unit SOT-23/SOT-143 SOT-323/SOT-363 Amp 1 1 V Same as VBR °C 150 Same as VBR 150 °C -65 to 150 -65 to 150 °C/W 500 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications TA = 25°C, Single Diode [3] Part Number HSMS[4] 2800 2802 2803 2804 2805 2808 280B 280C 280E 280F Package Marking Code A0 A2 A3 A4 A5 A8 A0 A2 A3 A4 280K AK 280L AL 280M H 280N N 280P AP 280R O Test Conditions Lead Code Configuration 0 Single Minimum Breakdown Voltage VBR (V) 2 Series 3 Common Anode 4 Common Cathode 5 Unconnected Pair 8 Bridge Quad[4] B Single C Series E Common Anode 70 F Common Cathode K High Isolation Unconnected Pair L Unconnected Trio M Common Cathode Quad N Common Anode Quad P Bridge Quad R Ring Quad IR = 10 mA Maximum Forward Voltage VF (mV) 410 IF = 1 mA Maximum Forward Voltage VF (V) @ IF (mA) Maximum Reverse Leakage IR (nA) @ VR (V) 1.0 @ 15 200 @ 50 Notes: 1. DVF for diodes in pairs and quads in 15 mV maximum at 1 mA. 2. DCTO for diodes in pairs and quads is 0.2 pF maximum. 3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled “Quad Capacitance.” 5. RD = RS + 5.2 Ω at 25°C and If = 5 mA. Maximum Capacitance CT (pF) 2.0 VF = 0 V f = 1 MHz Typical Dynamic Resistance RD (Ω)[5] 35 IF = 5 mA 2 Quad Capacitance Capacitance of Schottky diode quads is measured using an HP4271 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mV R.M.S. voltage at 1 MHz. Avago defines this measurement as “CM”, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula CDIAGONAL = __C_1_x__C_2 + ___C_3_x_C_4 C1 + C2 C3 + C4 A C1 C3 C C2 C4 B The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula CADJACENT = C1 + _______1_____ –1– + –1– + –1– C2 C3 C4 This information does not apply to cross-over quad diodes. Linear Equivalent Circuit, Diode Chip Rj RS Cj RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, K n = ideality factor (see table of SPICE parameters) Note: To effectively model the packaged HSMS-280x product, please refer to Application Note AN1124. SPICE Parameters Parameter Units BV V CJ0 pF EG eV IBV A IS A N RS Ω PB V PT M HSMS-280x 75 1.6 0.69 E-5 3.00E-08 1.08 30 0.65 2 0.5 3 Typical Perfor.


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