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NXPS20H110C

NXP

Dual power Schottky diode

TO-220AB NXPS20H110C Dual power Schottky diode Rev. 2 — 24 May 2012 Product data sheet 1. Product profile 1.1 Genera...


NXP

NXPS20H110C

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Description
TO-220AB NXPS20H110C Dual power Schottky diode Rev. 2 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  High junction temperature capability  Low leakage current 1.3 Applications  DC to DC converters  Freewheeling diode  Negligible switching losses  Optimised design to give low VF and high Tj(max)  OR-ing diode  Switched mode power supply rectifier 1.4 Quick reference data Table 1. Symbol VRRM IF(AV) Quick reference data Parameter repetitive peak reverse voltage average forward current IO(AV) average output current Tj junction temperature Static characteristics VF forward voltage IR reverse current Conditions square-wave pulse; δ = 0.5 ; Tj ≤ 163 °C; per diode; see Figure 1; see Figure 2; see Figure 3 square-wave pulse; δ = 0.5 ; Tmb ≤ 161 °C; both diodes conducting IF = 10 A; Tj = 25 °C; see Figure 6 IF = 10 A; Tj = 125 °C; see Figure 6 VR = 110 V; Tj = 25 °C; see Figure 7 VR = 110 V; Tj = 125 °C; see Figure 7 Min Typ Max Unit - - 110 V - - 10 A - - 20 A - - 175 °C - - 0.77 V - 0.59 0.64 V - 2.5 6 µA - 1.5 6.5 mA NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description A1 anode 1 K cathode A2 anode 2 K mounting base; cathode Simplified outline mb NXPS20H110C Dual power Schottky diode Graphic symbol A1 A2 K s...




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