Document
TO-220AC
NXPSC06650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant
3. Applications
• Power factor correction • Telecom/Server SMPS • UPS • PV inverter • PC Silverbox • LED/OLED TV • Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 6 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit - - 650 V - - 6A - - 175 °C
- 1.5 1.7 V
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NXP Semiconductors
NXPSC06650
Silicon Carbide Diode
Symbol
Parameter
Dynamic characteristics
Qr recovered charge
Conditions
IF = 6 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5
Min Typ Max Unit - 10 - nC
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 K cathode
mb
2 A anode
mb mb mounting base; connected to cathode
Graphic symbol
KA 001aaa020
12
TO-220AC (SOD59A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
NXPSC06650
TO-220AC
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
Version SOD59A
7. Marking
Table 4. Marking codes Type number NXPSC06650
Marking code NXPSC06650
NXPSC06650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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NXP Semiconductors
NXPSC06650
Silicon Carbide Diode
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR reverse voltage
DC
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 124 °C; square-wave pulse
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C; sine-wave
current
pulse
tp = 10 µs; Tj(init) = 25 °C; square-wave pulse
Tstg storage temperature
Tj junction temperature
25 Ptot (W)
20
15
10
5
aaa-014143
δ=1 0.5 0.1 0.2
8 IF(AV)
(A) 6
4
2
Min Max Unit - 650 V - 650 V - 650 V - 6A
- 12 A
- 36 A
- 310 A
-55 175 °C - 175 °C
aaa-014144
124 °C
0 0246
IF(AV) = IF(RMS) × √δ Vo = 0.766 V; Rs = 0.196 Ω
8 10 IF(AV) (A)
Fig. 1.
Forward power dissipation as a function of average forward current; square waveform; maximum values
0 -50 0 50 100 150 200
Tmb (°C)
Fig. 2. Forward current as a function of mounting base temperature; maximum values
NXPSC06650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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NXP Semiconductors
NXPSC06650
Silicon Carbide Diode
9. Thermal characteristics
Table 6. Symbol Rth(j-mb)
Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions Fig. 3
in free air
Min Typ Max Unit - - 2.7 K/W
- 60 - K/W
10 Zth(j-mb)
(K/W) 1
aaa-014145
δ = 0.5
δ = 0.3
10-1 δ = 0.1 δ = 0.05
P
δ=
tp T
δ = 0.02
10-2 10-6
10-5
δ = 0.01 single pulse
10-4
10-3
10-2
10-1
tp T
1 tp (s)
t 10
Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXPSC06650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
4/9
NXP Semiconductors
NXPSC06650
Silicon Carbide Diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics Qr recovered charge
Cd diode capacitance
Conditions
IF = 6 A; Tj = 25 °C; Fig. 4 IF = 6 A; Tj = 150 °C; Fig. 4 VR = 650 V; Tj = 25 °C VR = 650 V; Tj = 150 °C
IF = 6 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C; Fig. 5 f = 1 MHz; VR = 1 V; Tj = 25 °C f = 1 MHz; VR = 300 V; Tj = 25 °C f = 1 MHz; VR = 600 V; Tj = 25 °C
12 IF (A)
8
aaa-014146
16 Qr (nC)
12
(1) (2) (3)
4
(4)
8 4
Min Typ Max Unit
- 1.5 1.7 V - 1.8 2.1 V - - 200 µA - - 640 µA
- 10 - nC
- 190 - pF - 23 - pF - 19 - pF
aaa-014149
0 0123
Vo = 0.766 V; Rs = 0.196 Ω (1) Tj = 25 °C; typical values (2) Tj = 100 °C; typical values (3) Tj = 150 °C; typical values (4) Tj = 175 °C; typical values
VF (V)
4
Fig. .