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NXPSC06650 Dataheets PDF



Part Number NXPSC06650
Manufacturers NXP
Logo NXP
Description Silicon Carbide Diode
Datasheet NXPSC06650 DatasheetNXPSC06650 Datasheet (PDF)

TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirem.

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TO-220AC NXPSC06650 Silicon Carbide Diode 4 May 2015 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Power factor correction • Telecom/Server SMPS • UPS • PV inverter • PC Silverbox • LED/OLED TV • Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2 Tj junction temperature Static characteristics VF forward voltage IF = 6 A; Tj = 25 °C; Fig. 4 Min Typ Max Unit - - 650 V - - 6A - - 175 °C - 1.5 1.7 V Scan or click this QR code to view the latest information for this product NXP Semiconductors NXPSC06650 Silicon Carbide Diode Symbol Parameter Dynamic characteristics Qr recovered charge Conditions IF = 6 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 5 Min Typ Max Unit - 10 - nC 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode mb 2 A anode mb mb mounting base; connected to cathode Graphic symbol KA 001aaa020 12 TO-220AC (SOD59A) 6. Ordering information Table 3. Ordering information Type number Package Name NXPSC06650 TO-220AC Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC Version SOD59A 7. Marking Table 4. Marking codes Type number NXPSC06650 Marking code NXPSC06650 NXPSC06650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2/9 NXP Semiconductors NXPSC06650 Silicon Carbide Diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5; Tmb ≤ 124 °C; square-wave pulse; Fig. 1; Fig. 2 IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 124 °C; square-wave pulse IFSM non-repetitive peak forward tp = 10 ms; Tj(init) = 25 °C; sine-wave current pulse tp = 10 µs; Tj(init) = 25 °C; square-wave pulse Tstg storage temperature Tj junction temperature 25 Ptot (W) 20 15 10 5 aaa-014143 δ=1 0.5 0.1 0.2 8 IF(AV) (A) 6 4 2 Min Max Unit - 650 V - 650 V - 650 V - 6A - 12 A - 36 A - 310 A -55 175 °C - 175 °C aaa-014144 124 °C 0 0246 IF(AV) = IF(RMS) × √δ Vo = 0.766 V; Rs = 0.196 Ω 8 10 IF(AV) (A) Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values 0 -50 0 50 100 150 200 Tmb (°C) Fig. 2. Forward current as a function of mounting base temperature; maximum values NXPSC06650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3/9 NXP Semiconductors NXPSC06650 Silicon Carbide Diode 9. Thermal characteristics Table 6. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions Fig. 3 in free air Min Typ Max Unit - - 2.7 K/W - 60 - K/W 10 Zth(j-mb) (K/W) 1 aaa-014145 δ = 0.5 δ = 0.3 10-1 δ = 0.1 δ = 0.05 P δ= tp T δ = 0.02 10-2 10-6 10-5 δ = 0.01 single pulse 10-4 10-3 10-2 10-1 tp T 1 tp (s) t 10 Fig. 3. Transient thermal impedance from junction to mounting base as a function of pulse duration NXPSC06650 Product data sheet All information provided in this document is subject to legal disclaimers. 4 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4/9 NXP Semiconductors NXPSC06650 Silicon Carbide Diode 10. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics VF forward voltage IR reverse current Dynamic characteristics Qr recovered charge Cd diode capacitance Conditions IF = 6 A; Tj = 25 °C; Fig. 4 IF = 6 A; Tj = 150 °C; Fig. 4 VR = 650 V; Tj = 25 °C VR = 650 V; Tj = 150 °C IF = 6 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C; Fig. 5 f = 1 MHz; VR = 1 V; Tj = 25 °C f = 1 MHz; VR = 300 V; Tj = 25 °C f = 1 MHz; VR = 600 V; Tj = 25 °C 12 IF (A) 8 aaa-014146 16 Qr (nC) 12 (1) (2) (3) 4 (4) 8 4 Min Typ Max Unit - 1.5 1.7 V - 1.8 2.1 V - - 200 µA - - 640 µA - 10 - nC - 190 - pF - 23 - pF - 19 - pF aaa-014149 0 0123 Vo = 0.766 V; Rs = 0.196 Ω (1) Tj = 25 °C; typical values (2) Tj = 100 °C; typical values (3) Tj = 150 °C; typical values (4) Tj = 175 °C; typical values VF (V) 4 Fig. .


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